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| SMD Type MOS Field Effect Transistor 2SK2414 IC MOSFET Features Low On-Resistance RDS(on)1 = 70 m RDS(on)2 = 95 m MAX. (@ VGS = 10 V, ID = 5.0 A) MAX. (@ VGS = 4 V, ID = 5.0 A) +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 High Avalanche Capability Ratings +0.15 0.50-0.15 Built-in G-S Gate Protection Diodes 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 20 10 40 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 1.0 7.0 1.6 12 52 68 860 VDS=10V,VGS=0,f=1MHZ 440 110 15 ID=5A,VGS(on)=10V,RG=10 ,VDD=30V 90 75 35 70 95 Min Typ Max 10 10 2.0 Unit A A V S m m pF pF pF ns ns ns ns VGS(off) VDS=10V,ID=1mA Yfs RDS(on) Ciss Coss Crss ton tr toff tf VDS=10V,ID=5A VGS=10V,ID=5A VGS=4V,ID=5A 3.80 Low Ciss Ciss = 840 pF TYP. www.kexin.com.cn 1 |
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